Nitrogen incorporation in group III–nitride–arsenide materials grown by elemental source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. 1200 nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions
2. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
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5. Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments
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