Control of growth process and dislocation generation of GaAs1−xNx grown by all-solid-source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Optoelectronic Devices and Material Technologies for Photo-Electronic Integrated Systems
2. Threading dislocations in In‐doped GaAs/Si
3. Effect of Employing Positions of Thermal Cyclic Annealing and Strained-Layer Superlattice on Defect Reduction in GaAs-on-Si
4. Low dislocation density GaAs on Si heteroepitaxy with atomic hydrogen irradiation for optoelectronic integration
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1. Chemical beam epitaxy of GaAs 1-x N x using MMHy and DMHy precursors, modeled by ab initio study of GaAs(100) surfaces stability over As 2 , H 2 and N 2;Journal of Crystal Growth;2017-06
2. Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires;Semiconductors;2016-11
3. Ab initio study of GaAs(100) surface stability over As2, H2 and N2 as a model for vapor-phase epitaxy of GaAs1−xNx;Journal of Crystal Growth;2015-12
4. Defect Formation and Strain Relaxation in graded GaPAs/GaAs, GaNAs/GaAs and GaInNAs/Ge Buffer Systems for high-efficiency Solar Cells;Journal of Physics: Conference Series;2013-11-29
5. Misfit dislocation blocking by dilute nitride intermediate layers;Applied Physics Letters;2008-02-25
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