Improved electroluminescence of InAs quantum dots with strain reducing layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
2. Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes
3. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
4. High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy
5. InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T0=385K) Grown by Metal Organic Chemical Vapour Deposition
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fabrication of ultra-high-density InAs quantum dots using the strain-compensation technique;physica status solidi (a);2010-10-18
2. Surface photovoltage and photoluminescence excitation spectroscopy of stacked self-assembled InAs quantum dots with InGaAs overgrown layers;Journal of Applied Physics;2008-04-15
3. Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer;Applied Physics A;2005-09
4. Role of InxGa1-xAs Layer Composition in Modifying Strain Fields and Carrier Confinement Potentials in a Close-stacked InAs/GaAs Quantum Dot System;Journal of the Physical Society of Japan;2005-05-15
5. Growth of InGaAs-capped InAs quantum dots characterized by Atomic Force Microscope and Scanning Electron Microscope;Journal of Nanoparticle Research;2004-08
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