Role of InxGa1-xAs Layer Composition in Modifying Strain Fields and Carrier Confinement Potentials in a Close-stacked InAs/GaAs Quantum Dot System-Reference-Cited by-同舟云学术

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Role of InxGa1-xAs Layer Composition in Modifying Strain Fields and Carrier Confinement Potentials in a Close-stacked InAs/GaAs Quantum Dot System

Published:2005-05-15 Issue:5 Volume:74 Page:1496-1499
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Lee Woong¹,Yoo Yo-Han²,Shin Hyunho³,Myoung Jae-Min¹

Affiliation:

1. Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seoul 120-749, Republic of Korea

2. First R&D Centre, Agency for Defence Development, P.O. Box 35-1, Yuseong, Daejeon 305-600, Republic of Korea

3. Department of Ceramics Engineering, Kangnung National University, 120 Gangneung Daehangno, Kangnung, Kangwon-do 210-702, Republic of Korea

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.1143/JPSJ.74.1496

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Determination of interface structure and atomic arrangements for strained InAs/Ga1−xInxSb superlattices by high-resolution transmission electron microscopy;Journal of Applied Physics;2010-09-15

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