Molecular beam epitaxy of GaInNAs by using solid source arsenic
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 – 1.38 [micro sign]m
3. High power CW operation of InGaAsN lasers at 1.3 [micro sign]m
4. High-temperature characteristic in 1.3-/spl mu/m-range highly strained GaInNAs ridge stripe lasers grown by metal-organic chemical vapor deposition
5. A 1.3-µm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
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1. Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice;Semiconductors;2023-11
2. High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes;Advances in Optical Technologies;2012-11-11
3. Determination of Exciton Binding Energy of GaInNAs Quantum Well Structures by Piezoelectric Photothermal Spectroscopy Compared with Photoreflectance Measurements;Japanese Journal of Applied Physics;2011-06-20
4. Determination of Exciton Binding Energy of GaInNAs Quantum Well Structures by Piezoelectric Photothermal Spectroscopy Compared with Photoreflectance Measurements;Japanese Journal of Applied Physics;2011-06-01
5. MOVPE growth of dilute nitride III/V semiconductors using all liquid metalorganic precursors;Journal of Crystal Growth;2009-04
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