Defect generation in multi-stacked InAs quantum dot/GaAs structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. Atom-resolved scanning tunneling microscopy of vertically ordered InAs quantum dots
2. Prevention of gain saturation by multi-layer quantum dot lasers
3. Photoluminescence and time-resolved photoluminescence characteristics of InxGa(1−x)As/GaAs self-organized single- and multiple-layer quantum dot laser structures
4. Low-threshold injection lasers based on vertically coupled quantum dots
5. High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser
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1. Photoluminescence of dense arrays of InGaPAs/InGaAs quantum dots formed by substitution of group V elements;Journal of Luminescence;2024-12
2. Atomic-Scale Multimodal Characterization of Self-Assembled InAs/InGaAlAs Quantum Dots;The Journal of Physical Chemistry Letters;2024-03-29
3. Formation mechanisms of agglomerations in high-density InAs/GaAs quantum dot multi-layer structures;Applied Surface Science;2020-04
4. Wide-wavelength-range control of photoluminescence polarization in closely stacked InAs/GaAs quantum dots;Journal of Applied Physics;2019-06-21
5. Clarifying photoluminescence decay dynamics of self-assembled quantum dots;Scientific Reports;2019-03-15
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