The study of thermal stability during wet oxidation of AlAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
2. Cavity characteristics of selectively oxidized vertical‐cavity lasers
3. Buried tunnel contact junction AlGaAs-GaAs-InGaAs quantum well heterostructure lasers with oxide-defined lateral currents
4. AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs
5. Collector-up AlGaAs/GaAs heterojunction bipolar transistors using oxidised AlAs for current confinement
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Stresses in selectively oxidized GaAs/(AlGa)xOy structures;Semiconductors;2005-07
2. Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors;Semiconductors;2003-10
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