Properties of In0.53Ga0.47As/GaAs0.5Sb0.5 type II multiple quantum well structures grown on (111)B InP substrates by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Growth and properties of GaAsSb/InGaAs superlattice on InP;Klem;J. Crystal Growth,1991
2. Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy
3. M. Peter, K. Winkler, N. Herres, F. Fuchs, S. Muller, K.-H. Bachem, J. Wagner, Proceedings of the 1997 IEEE International Symposium on Compound Semiconductors, Institute of Physics, Bristol, 1998, p. 117.
4. Photoluminescence properties of In0.53Ga0.47As/GaAs0.5Sb0.5 type II quantum well structures lattice-matched to InP
5. Light-emitting diodes and laser diodes based on a Ga1−xInxAs/GaAs1−ySby type II superlattice on InP substrate
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