Growth of GaAs epitaxial layers on Si substrate with porous Si intermediate layer by chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices
2. Growth of GaAs on Si by MOVCD
3. Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strained‐layer superlattices
4. MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers
5. Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Advances in the development of high efficiency III-V multijunction solar cells on Ge|Si virtual substrates;2021 13th Spanish Conference on Electron Devices (CDE);2021-06-09
2. Direct growth of GaAs solar cells on Si substrate via mesoporous Si buffer;Solar Energy Materials and Solar Cells;2020-11
3. Porous Silicon as Substrate for Epitaxial Films Growth;Porous Silicon: From Formation to Applications: Optoelectronics, Microelectronics, and Energy Technology Applications, Volume Three;2016-01-07
4. Preparation and characterization of barium strontium titanate/silicon nanoporous pillar array composite thin films by a sol-gel method;International Journal of Minerals, Metallurgy, and Materials;2012-08
5. Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer;Journal of Applied Physics;2008-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3