In situ monitoring of GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopy-Reference-Cited by-同舟云学术

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In situ monitoring of GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopy

Published:1999-05 Issue: Volume:201-202 Page:128-131
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Taferner W.T,Mahalingam K,Dorsey D.L,Eyink K.G

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Heterojunctions and Semiconductor Superlattices;Foxon,1986

2. Calculation of resonant absorption and photoresponse measurement in p‐type GaAs/AlGaAs quantum wells

3. The origin of gallium desorption transients during AlGaAs/GaAs heterointerface formation by molecular beam epitaxy

4. A Monte Carlo study of gallium desorption kinetics during MBE of heterostructures

5. A. Madhukar, S.V. Ghaisas, CRC Critical Reviews of Solid State and Material Sciences, vol. 14, CRC Press, Cleveland, OH, 1988, p. 1.

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1. MBE growth of THz quantum cascade lasers;Molecular Beam Epitaxy;2013

2. Precise control of growth of DBR by MBE usingin-situ reflectance monitoring system;physica status solidi (c);2006-03

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