Real-time control of the MBE growth of InGaAs on InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Infra-red transmission spectroscopy of GaAs during molecular beam epitaxy
2. Closed-Loop Control of MBE Using an Integrated Multi-Sensor System
3. In Situ Substrate Temperature Measurement During MBE by Band-Edge Reflection Spectroscopy
4. Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy
5. In situ temperature control of molecular beam epitaxy growth using band-edge thermometry
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