Ohmic versus rectifying contacts through interfacial dipoles: Al/InxGa1−xAs-Reference-Cited by-同舟云学术

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Ohmic versus rectifying contacts through interfacial dipoles: Al/InxGa1−xAs

Published:1999-05 Issue: Volume:201-202 Page:769-772
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Marinelli C.,Sorba L.,Müller B.H.,Kumar D.,Orani D.,Rubini S.,Franciosi A.,De Franceschi S.,Lazzarino M.,Beltram F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. Commercial heterojunction bipolar transistor production by molecular beam epitaxy

2. Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitors Having Silicon Interface Control Layer

3. Silicon‐induced local interface dipole in Al/GaAs(001) Schottky diodes

4. C. Berthod, N. Binggeli, A. Baldereschi, Europhys. Lett. 36 (1996) 67; C. Berthod, J. Bardi, N. Binggeli, A. Baldereschi, J. Vac. Sci. Technol. B 14 (1996) 3000.

5. Formation energy, lattice relaxation, and electronic structure ofAl/Si/GaAs(100)junctions

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1. Interfacial Reactivity of Au, Pd, and Pt on BiI3 (001): Implications for Electrode Selection;ACS Applied Materials & Interfaces;2011-05-17

2. Numerical study of barrier height enhancement in n‐In 0.35 Ga 0.65 As Schottky diodes using a p‐type near‐interface layer;physica status solidi (c);2003-02

3. Metal/III–V diodes engineered by means of Si interlayers: Interface reactions versus local interface dipoles;Applied Physics Letters;2001-09-03

4. Ideal unreactive metal/semiconductor interfaces: The case ofZn/ZnSe(001);Physical Review B;2001-05-18

5. Tunable Schottky barrier contacts to In[sub x]Ga[sub 1−x]As;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

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