Author:
Qing-tai Zhao,Zhohg-lie Wang,Tian-bing Xu,Pei-ran Zhu,Jun-si Zhou,Xiang-dong Liu,Ji-tian Liu,Ke-ming Wang
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
5 articles.
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1. Effect of substrate temperature on the radiation damage from MeV Si implantation in Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01
2. Effects of the ion energy on damage production in MeV ion-implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04
3. Damage formation during 1.0 MeV Si self-implantation at low temperatures;Journal of Electronic Materials;1999-04
4. Monte Carlo simulation of silicon amorphization during ion implantation;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;1998-12
5. Measurement and Modelling of the Radiation Damage of Silicon by MeV Ag Ions;MRS Proceedings;1998