Low temperature homo- and hetero-epitaxy of sapphire films by reactive ionized cluster beam deposition-Reference-Cited by-同舟云学术

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Low temperature homo- and hetero-epitaxy of sapphire films by reactive ionized cluster beam deposition

Published:1991-07 Issue: Volume:59-60 Page:207-210
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hirayama H.,Takaoka G.H.,Usui H.,Yamada I.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Film and interface properties of epitaxial metal/insulator/semiconductor systems formed by ionized cluster beam deposition

2. Metallization by ionized cluster beam deposition

3. Electromigration behavior of aluminum films deposited on silicon by ionized cluster beam and other techniques

4. The structure zone model applied to ionized cluster beam films: Al on SiO2

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1. Novel sputtering method for Pd–Al2O3 UV transparent conductive coatings;Microelectronics Journal;2000-06

2. Ti3+:sapphire Thin Films Fabricated by Pulsed-Laser Deposition;Japanese Journal of Applied Physics;1998-05-15

3. Three Mysteries in Surface Science;International Journal of Modern Physics B;1997-12-20

4. Growth of Ti:sapphire single crystal thin films by pulsed laser deposition;Thin Solid Films;1997-05

5. Bilayer structure of PdAl2O3 for UV vidicon applications;Thin Solid Films;1996-09

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