A spatial damage energy distribution calculation for ion-implanted materials
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference49 articles.
1. Proc. 1st Int. Conf. on Ion Implantation;Stein,1971
2. Atomic structure of ion implantation damage and process of amorphization in semiconductors
3. Crystalline to amorphous transformation in ion‐implanted silicon: a composite model
4. Difficulties in deducing disordering mechanisms from experimental studies of disorder-ion fluence functions in ion irradiation of semiconductors
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2. Lateral selectivity of ion-induced quantum well intermixing;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-03
3. 3D defect distribution induced by focused ion beam irradiation at variable temperatures in a multi quantum well structure;Microelectronic Engineering;1996-01
4. Observation and simulation of focused ion beam induced damage;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-09
5. Theory for latent particle tracks in polymers;Nuclear Tracks and Radiation Measurements;1993-01
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