Difficulties in deducing disordering mechanisms from experimental studies of disorder-ion fluence functions in ion irradiation of semiconductors
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577908209133
Reference12 articles.
1. Swanson, M. L., Parsons, J. R. and Hoelke, C. W.Rad. Effects in Semiconductors, Edited by: Corbett and Watkins. 349London: Gordon and Breach Ltd.
2. Energy spike generation and quenching processesin ion bombardment induced amorphizationof solids
3. Criteria for bombardment-induced structural changes in non-metallic solids
4. Effect of irradiation temperature on Si amorphization process
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