Applications of ion implantation in III–V device technology-Reference-Cited by-同舟云学术

Applications of ion implantation in III–V device technology

Published:1993-06 Issue:1-4 Volume:79 Page:648-650
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Pearton S.J.,Ren F.,Chu S.N.G.,Hobson W.S.,Abernathy C.R.,Fullowan T.R.,Lothian J.R.,Elliman R.G.,Jacobson D.C.,Poate J.M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Ion Implantation and Ion Beam Processing,1984

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. Charged point defects in semiconductors;Materials Science and Engineering: R: Reports;2006-12

3. Comparative analysis of the implantation-induced structural modifications in GaAs and Ge;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-02

5. Near-infrared transmission characteristics of GaAs implanted with high energy (100 Mev) 28Si ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-06