Lattice location of implanted carbon in GaAs
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
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2. Detection and profiling of light elements in different condensed matter matrices
3. Investigations of lattice location and mobility of carbon in GaAs using the channeling technique
4. Use of channeling in association with charged particle activation to study the position of light elements at trace level in crystals: The case of carbon in GaAlAs prepared by MO-VPE
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1. Comparative study of MeV C[sup +] and C[sub 2][sup +] ion implantation in GaAs(100): Surface roughness and evaluation of lattice strain;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
2. Monte Carlo simulation of particle-induced X-ray emission channeling spectra of GaAs crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-07
3. Relation between the substitutional fraction and electrical activation of carbon in heavily C-ion implanted GaAs;Journal of Applied Physics;1999-05
4. Lattice location of N in ZnSe by channeling-NRA;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-10
5. Radiation Damage and Amorphization Mechanisms in Xe+ Irradiated CuInSe2 Single Crystals;Materials Science Forum;1997-05
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