Optical integration of laterally modified multiple quantum well structures by implantation enhanced intermixing to realize gain coupled DFB lasers
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. Fabrication of nanometer-structures for photonic devices based on the negative tone resist AZPN114
2. Gain coupled distributed feedback lasers realized by masked implantation enhanced intermixing
3. Interdiffusion behavior inn‐doped and undoped GaInAs/AlGaInAs multiple‐quantum‐well structures grown by molecular‐beam epitaxy
4. Characterization of high-quality molecular beam epitaxial grown In Al Ga1−−As/In Al Ga1−−As/InP heterostructures
5. Growth and assessment of InGaAs/InGaAlAs/InP multiple quantum well lasers
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Integration of photonics devices by using quantum well intermixing;SPIE Proceedings;1999-04-28
2. Analysis and design of vertical-cavity surface-emitting lasers for self-sustained pulsation operation;IEEE Journal of Quantum Electronics;1998-03
3. Semiconductor lasers using diffused quantum-well structures;IEEE Journal of Selected Topics in Quantum Electronics;1998
4. Wavefunction engineering for enhanced quantum well intermixing and integrated infrared spectrometers;Journal of Applied Physics;1997-10-15
5. High-power single-mode operation in DFB and FP lasers using diffused quantum-well structure;IEEE Journal of Quantum Electronics;1997-06
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