Interdiffusion behavior inn‐doped and undoped GaInAs/AlGaInAs multiple‐quantum‐well structures grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359992
Reference9 articles.
1. Very low chirping of InGaAs-InGaAlAs MQW DFB BRS lasers under 10 Gbit/s modulation
2. Weighted-coupling Y-branch optical switch in InGaAs/InGaAlAs quantum well electron transfer waveguides
3. Growth and assessment of InGaAs/InGaAlAs/InP multiple quantum well lasers
4. Fabrication of nanometer-structures for photonic devices based on the negative tone resist AZPN114
5. Characterization of high-quality molecular beam epitaxial grown In Al Ga1−−As/In Al Ga1−−As/InP heterostructures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Optical and structural studies of the effect of spacers in modulation-doped ZnSe/Zn1−xCdxSe quantum wells;Journal of Applied Physics;1999-07-15
2. Optical integration of laterally modified multiple quantum well structures by implantation enhanced intermixing to realize gain coupled DFB lasers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-12
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