Materials issues and device performances for light emitting Er-implanted Si
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference23 articles.
1. Thermal quenching mechanism of Yb intra‐4f‐shell luminescence in InP
2. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
3. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
4. Impact excitation of the erbium‐related 1.54 μm luminescence peak in erbium‐doped InP
5. Studies of GaAs:Er impact excited electroluminescence devices
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