Point defect accumulation in silicon irradiated by energetic particles: A molecular dynamics simulation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference22 articles.
1. Relation of neutron to ion damage annealing in Si and Ge
2. Crystalline to amorphous transformation in ion‐implanted silicon: a composite model
3. Ion-induced defects in semiconductors
4. Ion implantation of Si by12C,29Si, and120Sn: Amorphization and annealing effects
5. Amorphization processes in electron and/or ion-irradiated silicon
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1. Modeling Microstructure and Irradiation Effects;Metallurgical and Materials Transactions A;2010-12-22
2. Surface amorphization, sputter rate, and intrinsic stresses of silicon during low energy Ga+ focused-ion beam milling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-09
3. Defect characterization of low-energy recoil events in silicon using classical molecular dynamics simulation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-04
4. Status and open problems in modeling of as-implanted damage in silicon;Materials Science in Semiconductor Processing;2003-02
5. Amorphization mechanism and defect structures in ion-beam-amorphized Si, Ge, and GaAs;Physical Review B;2002-04-10
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