The effect of low glancing angle sputtering on depth resolution in secondary ion mass spectrometry
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference9 articles.
1. Beam-induced broadening effects in sputter depth profiling
2. Profile distortions and atomic mixing in SIMS analysis using oxygen primary ions
3. Evaluation of secondary ion mass spectrometry profile distortions using Rutherford backscattering
4. SIMS investigation of very shallow implanted Si layers
5. On the role of Gibbsian segregation in causing preferential sputtering
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2. Sputtering of stepped Cu surfaces by 3 keV Ar projectiles with glancing angles of incidence;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-10
3. Observation of ripple formation on O2+-irradiated GaN surfaces using atomic force microscopy;Applied Surface Science;2003-01
4. A low‐energy reactive‐ion gun using an ECR ion source and acceleration‐deceleration system;Review of Scientific Instruments;1992-03
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