SiC amorphlzation as a result of Ga+ implantation

Author:

Tulinov A.F.,Chechenin N.G.,Bourdelle K.K.,Makarov V.N.,Suvorov A.V.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Ioneimplantation;Ryssel,1978

2. Mechanisms of Creation and Migration of Defects in Semiconductors;Vavilov,1981

3. Disorder produced in SiC by ion bombardment

4. Structural alterations in SiC as a result of Cr+ and N+ implantation

5. Damage accumulation in ceramics during ion implantation

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Trends in sputtering;Progress in Surface Science;2000-05

2. The Characterization of SiC Hot-Implanted with Ga +;Materials Science Forum;1998-02

3. Sputtering of compound semiconductor surfaces. II. Compositional changes and radiation-induced topography and damage;Critical Reviews in Solid State and Materials Sciences;1994-01

4. Damage and aluminum distributions in sic during ion implantation and annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-03

5. A channeling study of ion-produced disorder in silicon carbide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-03

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