SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter-Reference-Cited by-同舟云学术

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SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter

Published:1991-04 Issue:1-4 Volume:55 Page:847-851
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Nakashima S.,Izumi K.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. A high current, high voltage oxygen ion implanter

2. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon

3. Proc. IEEE SOS/SOI Techn. Conf.;Fecher,1989

4. Proc. IEEE SOS/SOI Techn. Conf.;Houston,1989

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4. Technological innovation in low-dose SIMOX wafers fabricated by an internal thermal oxidation (ITOX) process;Microelectronic Engineering;2003-04

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