Contouring of SIMOX profiles by oxygen ion energy change
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
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1. Characterization of crystal structure features of a SIMOX substrate;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12
2. Photoluminescence properties of silicon quantum-well layers;Physical Review B;1997-02-15
3. The fluence spectrum allowing the formation of a connected buried layer in silicon by oxygen implantation;Semiconductor Science and Technology;1996-03-01
4. Dislocation Density Reduction in SIMOX (Separation by Implanted Oxygen) Multi-Energy Single Implantation* 1;Japanese Journal of Applied Physics;1995-06-15
5. Current-Path Observation in Low-Dose SIMOX (Separation by Implanted Oxygen) Buried-$\bf SiO_{2}$ Layer;Japanese Journal of Applied Physics;1995-06-15
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