登录 注册 会员服务 联系我们

In-depth spreading resistance characterization of buried insulating layers synthesized by high dose implantation of nitrogen or oxygen ions

  • Published:1985-05 Issue: Volume:10-11 Page:501-505
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Spinelli P.,Biasse B.,Jaussaud C.,De Pontcharra J.,Soubie A.,Bruel M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference5 articles.

1. Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon

2. Proc. Fifth Int. Conf. on Ion Implantation Equipment and Techniques;Guerra,1985

3. Impurity Doping;Maes,1981

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Double SIMOX Structures Formed by Sequential High Energy Oxygen Implantation into Silicon;Journal of The Electrochemical Society;2000

2. Peculiarities of buried silicon oxynitride layer synthesis by sequential oxygen and nitrogen ion implantation in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-06

3. Characterization of Buried-Nitride Silicon for Integrated Circuit Applications;MRS Proceedings;1987

4. Microstructure of buried nitride films in silicon formed by implanted nitrogen;Proceedings, annual meeting, Electron Microscopy Society of America;1986-08
同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3