Effect of resist patterning on gate oxide integrity in source/drain implant-Reference-Cited by-同舟云学术

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Effect of resist patterning on gate oxide integrity in source/drain implant

Published:1985-01 Issue:1-2 Volume:6 Page:376-381
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Tong Rebecca,McNally Peter

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference5 articles.

1. Experimental Determination of Current Paths of Ions Implanted into Insulators

2. M. Mack (Eaton/Nova), private communication (1984).

3. Dielectric Breakdown in Silicon Dioxide Films on Silicon

4. VLSI Science and Technology;Osburn,1982

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Practical manufacturing technique for reducing charge-induced gate oxide degradation during ion implantation;SPIE Proceedings;1999-08-27

2. Effects of plasma induced charges on thin oxide of CMOS technologies;Microelectronics Journal;1996-10

3. Process‐Induced Gate Oxide Charge Collector Damage;Journal of The Electrochemical Society;1992-10-01

4. Charging measurement and control in high-current implanters;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04

5. Charging studies with “CHARM”;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04

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