The use of four-point probe sheet resistance measurements for characterizing low dose ion implantation-Reference-Cited by-同舟云学术

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The use of four-point probe sheet resistance measurements for characterizing low dose ion implantation

Published:1985-01 Issue:1-2 Volume:6 Page:382-388
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Smith Alan K.,Perloff David S.,Edwards Rob,Kleppinger Rob,Rigik Michael D.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. OmniMap Model 111, Prometrix Corporation, Santa Clara, CA, USA.

2. report published in these Proceedings (Ion Implantation Equip. & Tech. '84);Greater Silicon Valley Implant Users Group,1985

3. Work performed at Burr-Brown Corporation, Tuscon, AZ, USA.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Boron Doping in Next-Generation Materials for Semiconductor Device;Characteristics and Applications of Boron;2022-10-26

2. Residual stresses and microstructure in tungsten thin films analyzed by x‐ray diffraction‐evolution under ion irradiation;Journal of Applied Physics;1996-11

3. Reduction of measurement system variation using the discrimination ratio;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03

4. The characterization of wafer surfaces and interfaces using high-frequency phonons;Surface and Interface Analysis;1989-12

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