Measurements and Monte Carlo calculations of hydrogen and deuterium depth distributions into silicon carbide implanted in the energy range from 0.25 to 1.75 keV

Author:

Leblanc L.,Ross G.G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effective combinations of features in predicting the range of incident ions using machine learning;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-08

2. Electronic stopping cross sections in silicon carbide for low-velocity ions with 1⩽Z1⩽15;Journal of Applied Physics;2004-07

3. Ion implantation range distributions in silicon carbide;Journal of Applied Physics;2003-06

4. Energy loss and angular dispersion of 2–200 keV protons in amorphous silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-06

5. Implantation studies of keV positive muons in thin metallic layers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05

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