Energy dependence of dechanneling due to dislocation loops

Author:

Gärtner Konrad,Uguzzoni Arnaldo

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Extracting defect profiles in ion-implanted GaN from ion channeling;Materials Science in Semiconductor Processing;2023-11

2. Combining MD-LAMMPS and MC-McChasy2 codes for dislocation simulations of Ni single crystal structure;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-07

3. Energy-Dependent RBS Channelling Analysis of Epitaxial ZnO Layers Grown on ZnO by RF-Magnetron Sputtering;Crystals;2019-06-04

4. Investigation of amorphization energies for heavy ion implants into silicon carbide at depths far beyond the projected ranges;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-01

5. Influence of radiation damage on the thermal properties of silicon carbide implanted with heavy noble gas ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-03

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