Influence of radiation damage on the thermal properties of silicon carbide implanted with heavy noble gas ions-Reference-Cited by-同舟云学术

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Influence of radiation damage on the thermal properties of silicon carbide implanted with heavy noble gas ions

Published:2016-03 Issue: Volume:371 Page:240-244
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Friedland E.,van der Berg N.G.

Funder

National Research Foundation

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. D. Hanson, A Review of Radionuclide Release from HTGR Cores During Normal Operation, Electric Power Research Institute, Report 1009382, March 2004.

2. Thermal etching of SiC

3. Elements of the Theory of Markov Processes and their Applications;Bharucha-Reid,1960

4. Influence of radiation damage on xenon diffusion in silicon carbide

5. Influence of radiation damage on krypton diffusion in silicon carbide

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Damage in Xe-implanted 4H-SiC under severe conditions;Journal of Nuclear Materials;2022-11

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