Ion channeling study of damage in neutron irradiated GaAs
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference18 articles.
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Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Redshift of the longitudinal optical phonon in neutron irradiated GaP;Journal of Applied Physics;1999-04
2. Phonon shifts relating to the defect structure in neutron-transmutation-doped semi-insulating GaAs;Physical Review B;1996-11-15
3. LO-phonon and plasmon coupling in neutron-transmutation-doped GaAs;Physical Review B;1996-01-15
4. Observation of Ga antisite defect in electron‐irradiated semi‐insulating GaAs by photoluminescence;Applied Physics Letters;1992-08-17
5. Carrier removal and changes in electrical properties of neutron irradiated GaAs;Journal of Applied Physics;1991-11
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