Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
7 articles.
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1. Higher moments of the implanted-ion profiles of bismuth in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-06
2. A Study of Longitudinal and Transversal Range Parameters of Ion-Implanted 40–360 keV Molybdenum in Silicon;Japanese Journal of Applied Physics;1999-01-15
3. Analysis of depth profiles of implanted lead ions in silicon;Applied Physics A: Materials Science & Processing;1998-09-01
4. Lateral Spread of Tungsten Ions Implanted in Silicon;Japanese Journal of Applied Physics;1998-03-15
5. Theoretical formulation for calculating lateral spread of implanted ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-02