Light- and heavy-ion channeling profiles in silicon-Reference-Cited by-同舟云学术

Light- and heavy-ion channeling profiles in silicon

Published:1990-03 Issue:1-4 Volume:48 Page:224-230
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Dekempeneer E.H.A.,Zalm P.C.,van Hoften G.,Politiek J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

1. Proc. Eur. Mater. Res. Soc.;Schreutelkamp,1988

4. Proc. 2nd Int. Conf. on Ion Implantation in Semiconductors;Seidel,1971

5. Proc. 2nd Int. Conf. on Ion Implantation in Semiconductors;Moline,1971

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4. Monte Carlo simulation of ion implantation in crystalline SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12

5. Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09