The electrical activity of phosphorus channelled into silicon-Reference-Cited by-同舟云学术

The electrical activity of phosphorus channelled into silicon

Published:1970-01 Issue:2 Volume:6 Page:237-245
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Goode P. D.,Wilkins M. A.,Dearnaley G.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577008236302

Reference22 articles.

1. Doping of silicon by ion implantation

2. Glotin, P., Grapa, J. and Manfret, A. Proc. Conf. on Applications of Ion Beams to Semicond. Tech. pp.619Grenoble (1967). (Editions Ophrys.)

3. Galaktionova, I. A., Gusev, V. M., Naumenko, V. G. and Titov, V. V. Proc. Conf. on Applications of Ion Beams to Semicond. Tech. pp.503Grenoble

4. Gibson, W. M., Martin, F. W., Stensgaard, R., Palmgren-Jensen, F., Meyer, N. I., Galster, G., Johansen, A. and Olsen, J. S. Proc. Conf. on Applications of Ion Beam to Semicond. Tech. pp.449Grenoble

5. Influence des défauts sur la canalisation d'ions de phosphore dans le silicium

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pre-amorphization damage in ion-implanted silicon;Materials Science Reports;1991-08

2. Light- and heavy-ion channeling profiles in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-03

3. Random and channeled implantation profiles and range parameters for P and Al in crystalline and amorphized Si;Journal of Applied Physics;1986-10-15

4. Spatial distributions of channeled ions. Comparison with experiments;Physica Status Solidi (a);1981-06-16

5. Spatial distribution of channeled ions;Physica Status Solidi (a);1981-05-16