Device charge-to-breakdown studies on a high-current implanter-Reference-Cited by-同舟云学术

Device charge-to-breakdown studies on a high-current implanter

Published:1991-04 Issue:1-4 Volume:55 Page:82-85
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Felch S.B.,Mehta S.,Kikuchi S.,Kitahara S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference6 articles.

1. Proc. Eur. RELCON;Wolters,1986

2. these Proceedings 8th Int. Conf. on Ion Implantation Technology;Leung,1990

3. these Proceedings 8th Int. Conf. on Ion Implantation Technology;Mehta,1990

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2. Evaluation of charging damage test structures for ion implantation processes;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07

3. Evaluation of ion implantation charging by using EEPROM;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04