Depth profiles of implanted 18F, 79Br, and 132Xe in silicon in the energy range 85

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Depth profiles of implanted 18F, 79Br, and 132Xe in silicon in the energy range 85–600 keV

Published:1989-05 Issue:1 Volume:42 Page:1-6
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Tan Chunyu,Xia Yueyuan,Yang Hong,Sun Xiufang,Liu Jiarui,Zheng Zongshuang,Zhu Peiran

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference29 articles.

1. Comparison of theoretical and empirical interatomic potentials

2. Effective stopping-power charges of swift ions in condensed matter

3. Range profiles of implanted Bi and Au in amorphous silicon

4. Energy dependence of the Z1-range oscillation effect in silicon

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3. Transport equations calculation of energy deposition distribution in atomic collisions cascade;SPIE Proceedings;1999-05-05

4. Energy levels of light nuclei, A = 20;Nuclear Physics A;1998-06

5. The mean projected range and range straggling of Xe ions implanted in Si and Si1N1.375H0.603;Materials Science and Engineering: B;1996-06

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