Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
11 articles.
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1. Primary Processes of Damage Formation in Semiconductors;Ion Beam Modification of Solids;2016
2. Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si;Journal of Applied Physics;1997-12-15
3. RBS-channeling determination of damage profiles in fully relaxed Si0.76Ge0.24 implanted with 2 MeV Si ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-03
4. Monte Carlo simulation of ion implantation in crystalline SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12
5. Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09