Study of the lattice location of oxygen in semiconductors by combining channeling and charged particle activation-Reference-Cited by-同舟云学术

Study of the lattice location of oxygen in semiconductors by combining channeling and charged particle activation

Published:1991-05 Issue: Volume:56-57 Page:896-899
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Bakraji E.Hanna,Blondiaux G.B.,Ducouret G.,Debrun J.L.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Activation Analysis with Charged Particles;Vandecasteele,1989

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3. Ion chanelling;Applied Radiation and Isotopes;1995-06

4. Computer simulation of channeling in Si and GaAs crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-05

5. Investigation of silicon width (p, ṕ) resonance scattering in 〈110〉 channeling direction;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05