Ion-implantation-induced fluorine agglomeration in tungsten disilicide prepared by low-pressure chemical vapour deposition-Reference-Cited by-同舟云学术

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Ion-implantation-induced fluorine agglomeration in tungsten disilicide prepared by low-pressure chemical vapour deposition

Published:1989-04 Issue: Volume:40-41 Page:595-598
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Petersson C.Sture,Whitlow Harry J.,Keinonen Juhani,D'heurle François M.,Le Goues Françoise K.,Joshi Rajiv V.,Scilla Gerald,Thomas Olivier

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Diffusion of Sb, Ga, Ge, and (As) in TiSi2

2. A review of LPCVD metallization for semiconductor devices

3. R.V. Joshi, Thin Solid Films, accepted for publication.

4. Properties of tungsten silicide film on polycrystalline silicon

5. Microanalysis of Flourine by nuclear reactions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Removal of the process‐induced fluorine associated to chemical vapor deposition of tungsten onto a polycrystalline silicon gate structure by heat treatment in a hydrogen‐containing atmosphere;Journal of Applied Physics;1990-09

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