The use of helium ion RBS for profiling epitaxial layers of CdxHg1−xTe-Reference-Cited by-同舟云学术

The use of helium ion RBS for profiling epitaxial layers of CdxHg1−xTe

Published:1990-01 Issue:1-4 Volume:45 Page:181-185
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Avery A.J.,Diskett D.J.,Lane D.W.,Giess J.,Irvine S.J.C.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. Properties of Mercury Cadmium Telluride,1987

5. Proc. SPIE Conf. on Future Infrared Detector Materials;Mullin,1989

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. Light ion induced damage in CdTe and Hg(1 − x)Cd(x)Te epitaxial thin films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-06

3. Ion beam damage in epitaxially grown MCT on GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-02

4. Analysis of IMF-grown CdxHg1 − xTe using helium ion RBS;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-02