The growth of high quality CdxHg1−xTe by MOVPE onto GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. The growth by MOVPE and characterisation of CdxHg1−xTe
2. The growth of CdxHg1−xTe using organometallics
3. Organometallic growth of II–VI compounds
4. A study of transport and pyrolysis in the growth of Cd Hg1ȡTe by MOVPE
5. A new MOVPE technique for the growth of highly uniform CMT
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1. Heteroepitaxial growth of CdTe films on (100) GaAs treated with Sb by low-pressure metalorganic vapor phase epitaxy;Journal of Crystal Growth;2008-07
2. Sb-treatment effect of GaAs substrate on Sb-doped Cd1–xMnxTe growth by MOVPE;physica status solidi (b);2007-05
3. Integrated infrared detectors and readout circuits;SPIE Proceedings;2006-05-05
4. Antimony Treatment Effect on Cd1-xMnxTe Growth on GaAs by Metal-Organic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2005-01-11
5. The origin of hillocks in (Hg, Cd)Te grown by MOVPE;Journal of Electronic Materials;1998-06
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