In situ monitoring of wafer charging during ion implantation-Reference-Cited by-同舟云学术

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In situ monitoring of wafer charging during ion implantation

Published:1989-02 Issue: Volume:37-38 Page:568-571
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Benveniste V.,Friedman H.E.,Mack M.E.,Sinclair F.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference4 articles.

1. Ion Implantation Technology;Basra,1987

2. Ion Implantation Equipment and Techniques;Tong,1985

3. these Proceedings 7th Int. Conf. on Ion Implantation Technology;Doherty,1989

4. these Proceedings 7th Int. Conf. on Ion Implantation Technology;Mack,1989

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge neutralization in ion implanters;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03

2. Progress in wafer charging and charge neutralization;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04

3. Measurement of Process Induced Wafer Potentials;Ion Implantation Technology–92;1993

4. Wafer Charging Control in High‐Current Implanters;Journal of The Electrochemical Society;1991-10-01

5. Charging studies with “CHARM”;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04

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