Feasibility of high-energy boron implantation for p-type retrograde well formation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference7 articles.
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Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Implantation Induced Defects in the Retrograde Well with a Buried Layer;Journal of The Electrochemical Society;2002
2. Formation and control of boron buried layers in silicon using an excimer laser;IEEE Electron Device Letters;1995-01
3. Near-surface defects formed by MeV ion implantation into silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
4. MeV Boron Implantation and Masking;MRS Proceedings;1993
5. Deep levels induced by high‐energy boron ion implantation intop‐silicon;Applied Physics Letters;1992-10-05
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