Mössbauer spectroscopy study of the thermal annealing behavior of very low and very high dose Co-implanted Si-Reference-Cited by-同舟云学术

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Mössbauer spectroscopy study of the thermal annealing behavior of very low and very high dose Co-implanted Si

Published:1989-02 Issue: Volume:37-38 Page:438-441
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Langouche G.,De Potter M.,Dézsi I.,Wu M.F.,Vantomme A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

1. Iron as a thermal defect in silicon

2. Transition metals in silicon

3. Mesotaxy: Single‐crystal growth of buried CoSi2layers

4. Epitaxy of semiconductor layered structures;Levi,1988

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Origin of the lattice sites occupied by implanted Co in Si;Semiconductor Science and Technology;2014-11-13

2. Mössbauer study of the proximity gettering of ion-implanted 57 Co impurities by B-Si precipitates in Si;Europhysics Letters (EPL);1998-12-15

3. Study of the trapping of CoFe impurities at the internal wall of nanosized Si voids;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12

4. Mössbauer study of the proximity gettering of cobalt atoms to He-induced nanosized voids inc-Si;Physical Review B;1996-06-15

5. Mössbauer characterization of γ-FeSi2precipitates in Si(100);Physical Review B;1995-01-01

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