Limits of depth resolution for sputter sectioning: A secondary ion mass spectrometry investigation of 63Ni in nickel
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Direct measurement of small diffusion coefficients with secondary ion mass spectroscopy
2. Theoretical assessments of major physical processes involved in the depth resolution in sputter profiling
3. Depth resolution in SIMS: Experimental investigation of Ni and In in Cu
4. A first order diffusion approximation to atomic redistribution during ion bombardment of solids, II. finite range approximation
5. Point defect sinks in self‐ion‐irradiated nickel: A self‐diffusion investigation
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1. Relation Between Time and Temperature Dependence of Diffusion and the Structural State in ZrTiCuNiBe Bulk Glasses;MATERIALS TRANSACTIONS;2002
2. Structural effects on diffusion in metallic glasses: The pressure dependence of Ni diffusion in as-quenched and relaxed Co42Zr58;Philosophical Magazine Letters;1999-10
3. Simulation of mass transport processes in a high temperature Ni crystal under low energy ion bombardment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-06
4. Diffusion of Manganese, Chromium, and Titanium in Single Crystalline Copper;physica status solidi (a);1998-05
5. Sink Strength Evolution of Heavy Ion Irradiated Nickel;MRS Proceedings;1998
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