Metals contamination in high and medium current implanters
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference6 articles.
1. Control of metal contamination in the Varian Extrion 1000 ion implantation system
2. IIT92;Pedersen,1993
3. these Proceedings (IIT '94);Mack,1995
4. A system and performance overview of the EXTRION 220 medium-current ion implanter
5. ITT92;van der Meulen,1993
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of tungsten contamination on the sensing margin of a CMOS image sensor cell;Japanese Journal of Applied Physics;2014-12-08
2. Review on grazing incidence X-ray spectrometry and reflectometry;Spectrochimica Acta Part B: Atomic Spectroscopy;1999-01
3. Surface metal contamination during ion implantation: Comparison of measurements by secondary ion mass spectroscopy, total reflection x-ray fluorescence spectrometry, and vapor phase decomposition used in conjunction with graphite furnace atomic absorption spectrometry and inductively coupled plasma mass spectrometry;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-01
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