Formation of a silicon / nitride layer system by N + implantation-Reference-Cited by-同舟云学术

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Formation of a silicon / nitride layer system by N + implantation

Published:1990-02 Issue:1-4 Volume:46 Page:405-408
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Gärtner K.,Götz G.,Weber B.,Danilovich J.,Novikov A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesis

2. Int. Conf. on Ion Implantation in Semiconductors and Other Materials;Danilovich,1988

3. The Stopping and Range of Ions in Solids;Ziegler,1985

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of crystalline α-Si3N4 layers by multiple nitrogen implantation at high temperature;Materials Letters;1992-05

2. Formation of silicon nitride layers by nitrogen implantation into Si/CoSi2 systems;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-03

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