Radiation damaging behaviour of GaP by MeV ion implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
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2. Radiation Damage and Amorphization Mechanisms in Xe+ Irradiated CuInSe2 Single Crystals;Materials Science Forum;1997-05
3. Atomic migration and related changes in defect concentration and structure due to electronic subsystem excitations in semiconductors;Uspekhi Fizicheskih Nauk;1997
4. Damage behavior of silicon by MeV Ge+ irradiation under tilted angle;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-09
5. Investigation of depth distributions of defects in Si created by high energy Ti ions;Vacuum;1994-09
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